maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 1.0 a peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r = 5v 10 a i r v r = 8v 20 a i r v r = 15v 50 a bv r i r = 100 a40 v v f i f = 10ma 0.29 v v f i f = 100ma 0.36 v v f i f = 500ma 0.45 v v f i f = 1.0a 0.55 v c j v r = 4.0v, f= 1.0mhz 50 pf t rr i f =i r = 500ma, i rr = 50ma, r l = 50? 15 ns sot-563 case central semiconductor corp. tm r1 (15-june 2006) description: the central semiconductor CMLSH1-40 is a 40 volt schottky diode packaged in a space saving sot-563 surface mount case. this picomini? device has been designed for applications requiring high current and a low forward voltage drop. marking code: c41 CMLSH1-40 surface mount picomini tm high current, low v f silicon schottky diode
central semiconductor corp. tm sot-563 case - mechanical outline r1 (15-june 2006) lead code: 1) cathode 2) cathode 3) anode 4) anode 5) cathode 6) cathode marking code: c41 CMLSH1-40 surface mount picomini tm high current, low v f silicon schottky diode
|
